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Conferences > DFM > 1995 > DGGC > DGGC465
  • Applications of Diamond Films and Related Materials: Third International Conference
  • Technical Digest Series (Optica Publishing Group, 1995),
  • paper DGGC465

C-V Characteristics of Diamond/Silicon MIS Structures

T. Nakama, T. Inushima, A. Ogasawara, T. Mizushima, S. Suzuki, and T. Shiraishi

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Abstract

C-V characteristics of diamond/silicon MIS structure were investigated by the use of the diamond deposited on silicon substrates by the hot-filament method. It is concluded that a highly resistive layer was formed under the surface of the silicon owing to the heat damage of the hot filament. This result was confirmed by depositing diamond with Sb vapor added to the reaction gas.

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