Abstract

Nitrogen doped a-C:N:H films have been deposited by using different mixtures of argon, nitrogen and cyclopentane (C₅H₁₀). With increasing nitrogen content in the film the electrical resistivity, hardness and the wetting angle could been lowered continuously. XPS analysis of the C1s core level revealed the relative contributions of carbon in C-C, C-H and C-N bonds at the surface. Biocompatibility tests (cell culturing with fibroblasts) revealed a good surface biocompatibility by means of proliferation rate and morphological behavior for all nitrogen doped samples.

© 1995 Optical Society of America