Abstract

Scanning Tunneling Microscopy and Spectroscopy (STM and STS) were applied for obtaining nano scale information on morphological and electronic properties of Amorphous Diamond Like Carbon (a:DLC) and Indium Tin Oxide (ITO) films (usually used as contact material to a:DLC). The a:DLC films have shown smooth topographic relief; their electronic band gap is estimated as of about 1 eV. I-V characterization of the ITO grown on the a:DLC has revealed nano-clusters of non-degenerate semiconductor within the matrix of degenerate semiconductor. It is presumed that I-V characterization of the ITO/a:DLC can yield the map of the graphite-like clusters’ location over the a:DLC surface. It is assumed also that the graphite phase is responsible for the high recombination rate of photocarriers in a:DLC, reducing mobility-lifetime (µτ) product value.

© 1995 Optical Society of America