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For the first time in-situ X-ray monitoring was applied for superthin DLC films investigation. The objects of in-situ investigations were DLC films obtained by RF-method on silicon substrates. The density, thickness and root-mean-square roughness of DLC films were controlled during the process of the film growth. The results of an investigation revealed that the roughness and density of DLC films were varied at the early stage. It was shown that obtained results can be explained by island mechanism of DLC films growth.
© 1995 Optical Society of America
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