Abstract

Diamond over-coatings on substrates which contain microelectronic circuitry may provide a means for reduction of thermal hot-spots, or act as a superior passivation layer. This study reports the results of microwave plasma-assisted chemical vapor deposition of diamond on silicon substrates which contain microelectronic devices. Deposition temperatures are compatible with the aluminum metallization technology commonly used in integrated circuit fabrication. Both passive devices (diffused resistors) and active devices (transistors) were successfully coated.

© 1995 Optical Society of America