Abstract

Diamond films were synthesized with varying CE₄ concentrations in 2.5 ~ 10% of the reacting source gases by the microwave plasma assisted chemical vapor deposition. Thermal conductivity was measured on these films by the steady state method in a temperature range 80 ~ 400 K. Higher thermal conductivity was obtained on the diamond film which was synthesized with lower CE₄ concentrations, but thick film synthesized with high CE₄ concentration showed also good thermal conductivity. Phonon scattering processes were considered to analyze thermal conductivity with the Callaway model. Grain size and concentrations of the extended defects and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with SEM and Raman spectra.

© 1995 Optical Society of America