Generation of 110-GHz train of subpicosecond pulses by passively mode-locked InGaAsP/lnP laser diodes

I. Yu. Khrushchev; A. G. Deryagin; A. G. Deryagin; D. V. Kuksenkov; D. V. Kuksenkov; V. I. Kuchinskii; V. I. Kuchinskii; E. L. Portnoi; E. L. Portnoi

European Quantum Electronics Conference
Technical Digest Series (Optica Publishing Group, 1994),
paper QThE5

Generation of 110-GHz train of subpicosecond pulses by passively mode-locked InGaAsP/lnP laser diodes

I. Yu. Khrushchev, A. G. Deryagin, D. V. Kuksenkov, V. I. Kuchinskii, and E. L. Portnoi

European Quantum Electronics Conference 1994

Amsterdam Netherlands
28 August–2 September 1994
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Ultrafast Techniques (QThE)

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I. Y. Khrushchev, A. G. Deryagin, D. V. Kuksenkov, V. I. Kuchinskii, and E. L. Portnoi, "Generation of 110-GHz train of subpicosecond pulses by passively mode-locked InGaAsP/lnP laser diodes," in European Quantum Electronics Conference, Technical Digest Series (Optica Publishing Group, 1994), paper QThE5.

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Abstract

Passively mode-locked semiconductor lasers are very promising as clock generators for ultrahigh bit rate optical transmission and data processing systems due to their ability to generate picosecond and subpicosecond optical pulses at high repetition rate.¹–³ The saturable absorber inside the laser diode cavity, which is required for passive mode-locking, can be formed by deep implantation of heavy ions into the cleaved facets. Previously this method was used for passive modelocking in single quantum well AlGaAs laser diode.³

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