Abstract

During the past several years there are considerable efforts to fabricate and to optimize semiconductor resonators. Because the photon energies used were exclusively close to the band gap the nonlinearity induced susceptibility changes are due to real carrier excitation if heating could be avoided.¹ Although the theoretical analysis of the optical response of planar resonators, basing on a modal theory (see, e.g., Ref 2 and the references therein), has shed some light on the physics of bistability and switching, even in the case of finite beams and short pulses, the semiconductor models employed were fairly poor. Hence, a proper material modelling needs to be incorporated in order to describe the rich physics of excited semiconductors appropriately. In doing so one is in the position to model the experiments adequately.¹

© 1994 IEEE