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Optica Publishing Group
  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1994),
  • paper QWB6

THz radiation from delta-doped GaAs

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Abstract

The emission of ultrafast THz pulses from semiconductor surfaces after femtosecond laser excitation was recently observed by Zhang and Auston.1 Photoexcited carriers created near the surface are accelerated by the electric field present due to surface band-bending. The resulting photo current radiates an electromagnetic pulse possessing frequency components in the THz-regime.

© 1994 IEEE

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