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Optica Publishing Group
  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper QThG25

Intrinsic mechanisms and limits of three-micron Er3+-doped laser crystals

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Abstract

Despite of a longer lifetime of the lower laser level 4I11/2 as compared to the upper laser level 4I13/2 efficient room temperature laser emission between these levels has been obtained in concentrated Er3+ systems; this is caused by an up-conversion process from the 4I13/2 level which recirculates its excitation to the upper level 4I9/2 from which the major part decays to the emitting level. Since the up-conversion process takes place essentially inside the n.n. pairs of excited Er ions, a high concentration (usually above 5%) is necessary to on-set the migration within the 4I13/2 levels making the up-conversion effective. However, at these concentrations other energy transfer processes could also take place, such as an up-conversion from the emitting level 4I11/2 and various cross-relaxation processes which could compete with the radiative and non-radiative de-excitation. Thus the energy transfer processes lead to a tremendous recirculation of excitation inside the system of Er3+ ions and make the three micron emission possible, regardless of the pump level. This emission is usually modelled numerically by solving the system of rate equation for levels up to the 4S3/2. However, it was shown that in case of garnet crystals, characterised by strong multiphonon processes, an analytical solution could be also obtained.

© 1996 IEEE

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