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  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1996),
  • paper QTuF7

Interaction of Far-Infrared Radiation with Hot two-Dimensional Carriers in the Quantum Wells GaAs/Al1-xGaxAs and Ge/Ge1-xSix

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Abstract

The main aim of present work is a study of far infrared (FIR) emission from p-type GaAs/Al1-xGaxAs and Ge/Ge1-xSix structures caused by direct transitions of hot two-dimensional (2D) holes between quantum-well subbands and modulation of FDR. laser radiation under heating of 2D-holes in quantum wells (QW). These phenomena were not observed before and this is a first step in working out of hot 2D-hole FIR lasers.

© 1996 IEEE

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