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  • European Quantum Electronics Conference
  • Technical Digest Series (Optica Publishing Group, 1998),
  • paper QThK2

Photochemical Hydrogen Desorption from Hydrogen-Terminated Silicon by VUV Photons

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Abstract

The 7.9 eV photons of a F2 laser (157 nm) induce direct photochemical desorption of hydrogen from a Si(111)-(1x1):H surface. The cross section of (1.2±0.8)x10-20 cm2 indicates that the optical process is more efficient than the recently discovered electron-stimulated process. For comparison, results are also reported for the 4.0 eV photons of a XeCl-excimer laser (308 nm), which initiate photothermal desorption.

© 1998 IEEE

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