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The increase of binding energy of donor impurity in QW structure compared with bulk material was predicted by many theorists. In application, it is possible to increase the binding energy by using this mechanism in QW structure such that electrons would be frozen out in the impurity state at higher temperature. Thus the transition between the impurity state and the second mini-band in the QW would be possible at higher temperature and this is very useful in the study of QWIP.
© 1998 IEEE
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