Abstract

Key elements in photonic quantum technologies and their implementations are triggered sources of single and indistinguishable photons. Among various candidates, semiconductor quantum dots are subject of intense research, and they represent a valid approach for the generation of bright quantum light. For semiconductor-based quantum light sources, the use of diode structures has been shown to be highly useful for improving the emitted photon coherence, stabilizing the source charge environment. Here we describe the implementation of a novel n-i-n diode structure embedding semiconductor quantum dots, combining molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) growth (Fig. 1(a)). This new design allows for achieving spectral and charge state tuneability, as well as very low photon dephasing [1].

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