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Non-Planar Nano-Epitaxy of InGaN Quantum-Well Emitters for Green-Yellow Semiconductor Lasers

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Abstract

We report non-planar regrowth of InGaN quantum wells on triangular InGaN buffer layers grown on sub-200nm-wide GaN ridges. Photo-pumped internal quantum efficiencies above 20% at yellow wavelengths hold promise for semiconductor laser gain regions.

© 2023 The Author(s)

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