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Fabrication of sputtering-GaN waveguide resonators

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Abstract

We demonstrate sputtering-GaN resonators on the silicon-based substrate. By employing high-power impulse magnetron sputtering, waveguide resonators with quality factor 4×104 can be achieved. This work highlights the potentials for fabricating GaN waveguides using CMOS-compatible processes.

© 2023 The Author(s)

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