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Conferences > GWOE > 1989 > SA > SA3
  • Numerical Simulation and Analysis in Guided-Wave Optics and Optoelectronics
  • Technical Digest Series (Optica Publishing Group, 1989),
  • paper SA3
  • •https://doi.org/10.1364/GWOE.1989.SA3

Two-Dimensional Device Simulation of InGaAsP Ridge-Waveguide Lasers

Shunji Seki, Masaaki Tomizawa, Kiyoyuki Yokoyama, and Akira Yoshii

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Abstract

Two-dimensional device simulator of laser diodes has been introduced and its capability for a quantitative device design of 1.3-µm InGaAsP ridge-waveguide lasers has been shown. It has been quantitatively clarified that the current spreading in the cladding layer plays a key role in determining the threshold current. In addition, it is found that the nonradiative recombination exerts a significant influence not only on the threshold current but also on the carrier distribution in the active layer, that is, the lateral gain profile.

© 1989 Optical Society of America

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