Two-dimensional analysis of InGaAsP/InP intentionally reverse-biased buried heterostructure lasers

Shunji Seki; Takayuki Yamanaka; Katsuhiko Kurumada

doi:10.1364/IPR.1990.WG1

Integrated Photonics Research
Technical Digest Series (Optica Publishing Group, 1990),
paper WG1
•https://doi.org/10.1364/IPR.1990.WG1

Two-dimensional analysis of InGaAsP/InP intentionally reverse-biased buried heterostructure lasers

Shunji Seki, Takayuki Yamanaka, and Katsuhiko Kurumada

Integrated Photonics Research 1990

Hilton Head, South Carolina United States
26–28 March 1990
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Semiconductor Lasers: 2 (WG)

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S. Seki, T. Yamanaka, and K. Kurumada, "Two-dimensional analysis of InGaAsP/InP intentionally reverse-biased buried heterostructure lasers," in Integrated Photonics Research, Technical Digest Series (Optica Publishing Group, 1990), paper WG1.

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Abstract

InGaAsP/InP buried-heterostructure (BH) laser diodes play a significant role in long-haul optical transmission systems. Recent requirements for InGaAsP/InP lasers with light output of more than tens of milliwatts have led to the need for BH structures that have an ultimately low leakage current under high-current operation. Although the current leakage mechanism in conventional BH structures of which buried region consists of p-n-p-n structure has been extensively studied,¹ the basic design principles for lowering leakage current under high-current operation have not been clarified yet.

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