Abstract

Polycrystalline silicon surface of arsenic atoms of ≃10¹⁵ cm⁻² implanted at 40keV showed color change from gold to light–red under a fluorescent light and highly refractory obstacle against exposure etching of radical fluorine excited with microwave. The refractory surface mechanism may be related to the fastening of vibration of lattice Si atoms of polycrystalline silicon. This is an interesting object for analysis of the Raman spectroscopy.

© 1993 Optical Society of America