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Conferences > CLEO_Europe > 1996 > CFE > CFE6

Raman Scattering in Silicon Implanted by High Dose of Krypton

M.F. Galjautdinov, N.V. Kurbatova, S. A. Moiseev, and E.I. Shtyrkov

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Abstract

The aim of this work is to study microstructure of a porous Si, which was formed as a result of implantation and laser annealing, by Raman spectroscopy. Possibility of formation of stable defects with noble gase atoms was also investigated after a monocrystal Si (111) doped by Kr+ (40 kev, 6·10l4-2,4·1017 ion/cm2) at room temperature. Laser annealing was performed with a ruby laser at 0,69 mkm, 50 ns, 0,3-1,6 J/cm2. Spectra of Raman scattering were taken by a DFS-52 spectrometer with a pumping irradiation at a wave length of 510,6 nm and a repetition rate of 10 kHz.

© 1996 IEEE

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