Emission properties of quantized excitonic polaritons in a thin GaAs layer

L. Schuitheis; K. Ploog

doi:10.1364/ICOL.1984.FE4

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper FE4
•https://doi.org/10.1364/ICOL.1984.FE4

Emission properties of quantized excitonic polaritons in a thin GaAs layer

L. Schuitheis and K. Ploog

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
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L. Schuitheis and K. Ploog, "Emission properties of quantized excitonic polaritons in a thin GaAs layer," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper FE4.

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Abstract

Excitonic polaritons in a thin semiconductor layer have discrete wave vectors perpendicular to the layer. The eigenstates are standing polarization waves (Fabry-Perot modes). Previous investigators /1/ have reported interference structure from these modes in the reflectance spectra of thin II-VI semiconductors platelets.

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