Abstract

We have investigated the reabsorption kinetics of free- and bound-exciton luminescence near the surface in high-purity n-GaAs (n=2×10¹⁴/cm³) at 4.2 K, with using a sensitive detection technique which measures precisely the reabsorption quantities of the crystal-bulk luminescence excited by the dual laser beams. As well as the large reabsorption effects of the donor bound exciton (D°,X), we have found for the first time the reabsorption anomaly of the exciton-polariton luminescence just above the bottleneck region.

© 1984 Optical Society of America