Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Spectral Structure of Secondary Emission in Indirect Exciton-Phonon System

Not Accessible

Your library or personal account may give you access

Abstract

We study the secondary emission due to recombination of excitons near the indirect band bottom, where the relaxation is governed by the multiple scattering by acoustic phonons and a nonradiative decay process. In this case, the secondary emission can be separated exactly into the Raman scattering (SR) and the hot luminescence (SL) parts.1,2) General expressions of the excitation spectrum (IR) of SR and the lineshape of SL are presented. The nonradiative decay is attributed to the scattering by imperfections, and therefore the decay rate σ represents the sample dependence. Near the band bottom, the scattering by acoustic phonons is quite sensitive to temperature and the kinetic energy of exciton (Eac) moving with the sound velocity. From the temperature dependence of IR, we can determine σ and Eac uniquely. It should be emphasized that in our theory, only σ and Eac values are necessary for the calculation of SL.

© 1984 Optical Society of America

PDF Article
More Like This
Resonant Light Scattering and Hot Luminescence at the Indirect Gap in BiI3

T. Karasawa, T. Komatsu, and Y. Kaifu
MB43 International Conference on Luminescence (ICOL) 1984

Emission of Free and Bound Excitons in GaSe and InSe Crystals in the Direct and Indirect Transitions Region

Yu. P. Gnatenko, P.A. Skubenko, Yu. I. Zhirko, and O.V. Fialkovskaya
FE7 International Conference on Luminescence (ICOL) 1984

Secondary Emission Spectra and Energy Relaxation of Polaritons in Layer Polar Semiconductors

M.S. Brodin and I.V. Blonskii
ThE2 International Conference on Luminescence (ICOL) 1984

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.