Emission of Free and Bound Excitons in GaSe and InSe Crystals in the Direct and Indirect Transitions Region

Yu. P. Gnatenko; P.A. Skubenko; Yu. I. Zhirko; O.V. Fialkovskaya

doi:10.1364/ICOL.1984.FE7

International Conference on Luminescence - 1984
Technical Digest Series (Optica Publishing Group, 1984),
paper FE7
•https://doi.org/10.1364/ICOL.1984.FE7

Emission of Free and Bound Excitons in GaSe and InSe Crystals in the Direct and Indirect Transitions Region

Yu. P. Gnatenko, P.A. Skubenko, Yu. I. Zhirko, and O.V. Fialkovskaya

International Conference on Luminescence 1984

Madison, Wisconsin United States
13–17 August 1984
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Y. P. Gnatenko, P. A. Skubenko, Y. I. Zhirko, and O. V. Fialkovskaya, "Emission of Free and Bound Excitons in GaSe and InSe Crystals in the Direct and Indirect Transitions Region," in International Conference on Luminescence - 1984, Technical Digest Series (Optica Publishing Group, 1984), paper FE7.

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Abstract

The layered GaSe and InSe crystals are characterized by the presence of a great number of intensive emission lines, located near the emission line of a free exciton. The presence of various crystalline modifications notably complicates their interpretation.

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