Abstract

Edge emission is known to be observed in donor-doped CdS /1–3/. The question that remains is the nature of its individual bands, especially in emission spectra of films. In this paper the edge photoluminescence (PL) and electroluminescence (EL) of vacuum-deposited low-resistivity (10–10⁻¹ Ohm cm) CdS:In, Cd films have been studied over the range 4.2 to 300 K. The films, 1-3μ thick, were deposited onto glass, mica or molibdenum substrates by the methods described in /3/. The MISM structures of Au-In₂O₃-CdS-In₂O₃(Mo) were used in EL experiments.

© 1984 Optical Society of America