Abstract

The potential advantages of semiconductor-based integrated optics have been recognized for some time.¹ This is because, in a semiconductor such as GaAs for example, one can fabricate both optical devices such as detectors, LEDs, lasers, and modulators, and electronic devices such as transistors and transferred electron devices. Being made from a common material permits these devices to be monolithically integrated into optoelectronic circuits which take advantage of the techniques of integrated optics and integrated electronics. This paper will review our progress in the development of monolithically integrated optoelectronic circuits on semi-insulating (SI) GaAs, including a description of a monolithically integrated optical repeater. In addition, results for several new laser structures on SI GaAs will be presented.

© 1980 Optical Society of America