Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > IGWO > 1982 > ThB > ThB1

Monolithic Integration of a GaAℓAs Buried-Heterostructure Laser and a Bipolar Phototransistor

N. Bar-Chaim, Ch. Harder, J. Katz, S. Margalit, A. Yariv, and I. Ury

Not Accessible

Your library or personal account may give you access

Abstract

One of the key elements in the fabrication of GaAℓAs/GaAs integrated optoelectronic circuits is the semiconductor laser, which should be constructed to have a very low threshold current in order to minimize the heat dissipation of the device. A very attractive candidate with this feature is the buried-heterostructure (BH) laser [1] which has been fabricated recently on a GaAs semi-insulating substrate [2].

© 1982 Optical Society of America

PDF Article
More Like This
Buried-heterostructure AlGaAs lasers on semi-insulating substrates

N. Bar-Chaim, J. Katz, A. Yariv, and I. Ury
MB3 Optical Fiber Communication Conference (OFC) 1981

GaInAsP/InP Double Heterostructure Laser with Monolithically Integrated Passive Waveguide

Z. L. Liau and J. N. Walpole
WB3 Integrated and Guided Wave Optics (IGWO) 1982

High T0 low-threshold InGaAsP buried- heterostructure lasers

N. Tamari, M. Oran, H. Shtrikman, and A. A. Ballman
ThDD1 Optical Fiber Communication Conference (OFC) 1982

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use