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GaInAsP/InP Double Heterostructure Laser with Monolithically Integrated Passive Waveguide

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Monolithic integration of passive waveguides with double heterostructure (DH) lasers has the potential for a number of interesting device applications, including lasers with distributed Bragg reflectors or integrated external cavities, intensity or frequency modulators, and mode-locked DH lasers. Previous attempts to achieve this structure with GaAs/GaAlAs or GaInAsP/InP systems resulted in relatively high threshold current densities.(1-6) We have developed in this work a liquid-phase epitaxial (LPE) technique to grow Gax2In1x2Asy2P1y2/InP DH Passive waveguides integrated with and precisely aligned to previously grown Gax1 In 1x1Asy1P1y1/InP DH laser structures. Uniform waveguide layers and good surface morphology have been achieved in the LPE regrowth. Relatively low threshold current densities (2.4 - 3.1 kA/cm2) were obtained for broad area lasers with one integrated passive waveguide section.

© 1982 Optical Society of America

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