Abstract

Wavelength control of semiconductor lasers is important in optical communication, where mode stability, tunability, and FM modulation are vital to high quality transmission. Numerous work had been done in optimizing stripe geometry lasers to achieve mode stability. Tunability of semiconductor lasers was also achieved by the use of external cavity, grating, or modulators. However, work on wavelength control was limited to DFB and DBR lasers using the properties of periodic waveguides. On the other hand, interferometric methods had been used widely in gas lasers for mode control [1]. In this report we investigate the principle of using the interferometric techniques in building a monolithically integrated semiconductor interferometric laser (IL).

© 1982 Optical Society of America