Optical Waveguides in InGaAsP And InP by Metal Diffusion

I. P. Kaminow; R. C. Alferness; L. W. Stulz; A. G. Dentai

doi:10.1364/IGWO.1982.WD6

Topical Meeting on Integrated and Guided-Wave Optics
Technical Digest Series (Optica Publishing Group, 1982),
paper WD6
•https://doi.org/10.1364/IGWO.1982.WD6

Optical Waveguides in InGaAsP And InP by Metal Diffusion

I. P. Kaminow, R. C. Alferness, L. W. Stulz, and A. G. Dentai

Integrated and Guided Wave Optics 1982

Pacific Grove, California United States
6–8 January 1982
ISBN:

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I. P. Kaminow, R. C. Alferness, L. W. Stulz, and A. G. Dentai, "Optical Waveguides in InGaAsP And InP by Metal Diffusion," in Topical Meeting on Integrated and Guided-Wave Optics, Technical Digest Series (Optica Publishing Group, 1982), paper WD6.

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Abstract

Strip waveguides have been formed on semiconductor heterostructure planar waveguides by etching ridges to provide dielectric loading^[1] or by the photoelastic effect^[2]. Lateral guiding has also been produced in semiconductor lasers by various buried structures that require etching and regrowth. For the most part, these strip guides do not contain bends.

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