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Conferences > IGWO > 1986 > PDP > PDP7

High Efficiency 4 Gb/s GaInAsSb Photodetectors for Wavelengths to 2.3 μm

J. E. Bowers, A. K. Srivastava, C. A. Burrus, J. C. DeWinter, M. A. Pollack, and J. L. Zyskind

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Abstract

Alloys of Ga1-xInxAsySb1-y lattice-matched to GaSb (where y/x ~ 0.9) span the wavelength range from 1.7 to 4.3 μm. This range is important for future communications systems utilizing novel fibers with a projected minimum loss of <0.01 dB/km1. This paper describes a GaInAsSb p-i-n homojunction photodiode that operates with high speed and high quantum efficiency at room temperature.

© 1986 Optical Society of America

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