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Conferences > IGWO > 1986 > PDP > PDP8

Ultra High Gain Ga0.47 In0.53 As Photoconductive Detectors Grown by Chemical Beam Epitaxy

A. Antreasyan and W. T. Tsang

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Abstract

We report the fabrication and performance of planar, interdigitated Ga0.47In0.53As photoconductive detectors in the wavelength range 1.1-1.6μm. The devices have been fabricated on top of a 1.5μm thick undoped GalnAs layer which is grown on a semi-insulating InP substrate by chemical beam epitaxy (CBE) [1]. The ternary layer grown by this novel technique had a background doping level of N ~ 5x1015 cm-3 and Hall mobilities of 10500 and 45000 cm2v-1s-1 at 300°K and 77°K, respectively.

© 1986 Optical Society of America

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