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High-performance InGaAsP/InP phase modulators for integrated optics

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Abstract

The single-mode phase modulator is an important component of coherent optical communications systems which are now being developed in the 1.1-1.6-μm wavelength range.1 This paper reports an efficient InGaAsP/InP ridge waveguide phase modulator fabricated on material grown by metal-organic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE). The structure is designed to be compatible with the type of distributed feedback laser demonstrated at BTRL2 allowing the possibility of integration.

© 1986 Optical Society of America

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