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Conferences > IGWO > 1986 > THAA > THAA2

High-speed electroabsorption modulator with strip-loaded InGaAsP planar waveguide

Y. Noda, M. Suzuki, Y. Kushiro, and S. Akiba

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Abstract

Monolithic integration of distributed feedback (DFB) lasers and external modulators1 is a very promising approach to high-performance intensity-modulated sources in a high-bit-rate optical fiber communication system. An electroabsorption (EA) or Franz-Keldysh effect modulator2-4 is an efficient candidate for the integrated external modulator. We report characteristics of InGaAsP/InP double-heterostructure (DH) EA modulators grown by vapor-phase-epitaxy (VPE); this is the first report of high-frequency operation over 1 GHz of EA modulators.

© 1986 Optical Society of America

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