Abstract

With the advent of using light as the carrier frequency the trend is toward high speed transmitters and receivers to capitalize on the high bandwidth afforded. We have been concentrating on the receiver end and particularly the photodiode. GaAs Schottky photodiodes fabricated on molecular beam epitaxy have demonstrated-3-dB bandwidths in excess of 100 GHz at a wavelength of 600 nm. For longer wavelengths, 1.06 and 1.30 μm, we have developed a front side illuminated double heterostructure InP/GalnAs/lnP PIN photodiode with the -3-dB bandwidth in excess of 18 GHz. This device bandwidth is insensitive to wavelength in the 1.06–1.6-μm range. In addition, the dark current is < 100 pA at the operating voltage of −4 V for a 50-μm diam device with a 25-μm diam bondpad. High speed characterization techniques using electrooptic sampling, a microwave spectrum analyzer, and standard sampling are discussed. Growth techniques of the PIN photodiode using atmospheric organometallic vapor phase epitaxy are also discussed.

© 1986 Optical Society of America