22-GHz Bandwidth InGaAs/InP PIN Photodiodes

J. E. Bowers; C. A. Burrus; R. S. Tucker

doi:10.1364/PEO.1985.ThA3

Topical Meeting on Picosecond Electronics and Optoelectronics
(Optica Publishing Group, 1985),
paper ThA3
•https://doi.org/10.1364/PEO.1985.ThA3

22-GHz Bandwidth InGaAs/InP PIN Photodiodes

J. E. Bowers, C. A. Burrus, and R. S. Tucker

Picosecond Electronics and Optoelectronics 1985

Incline Village, Nevada United States
13–15 March 1985
ISBN:

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Optoelectronics (ThA)

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J. E. Bowers, C. A. Burrus, and R. S. Tucker, "22-GHz Bandwidth InGaAs/InP PIN Photodiodes," in Topical Meeting on Picosecond Electronics and Optoelectronics, (Optica Publishing Group, 1985), paper ThA3.

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Abstract

Fast GaAs Schottky photodetectors for visible and near-infrared applications have been demonstrated [1], and high-speed PIN structures using InGaAs/InP for the emerging lightwave communications wavelengths (1.3–1.6 μm) have been reported [2,3]. We describe here the fabrication and characterization of an improved InGaAs/InP PIN photodiode with a measured 3 dB bandwidth of 22 GHz.

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