Abstract
In this article, we presented a study of InAs0.04P0.96/InP Bragg-spaced quantum wells (BSQWs), a type of resonant photonic band gap structure (RPBG), grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580 °C appears to be extremely abrupt, uniform, free of misfit dislocations, and narrow PL line width. By researching the reflection spectra at different temperature, we presented a theoretical analysis of the changes in RPBG, and proposed a new scheme of using the temperature to control the resonant photonic band gap structure.
© 2012 Optical Society of America
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