Abstract

The successful performance of large-area GaAs/GaAs_1-xP_x heterostructure waveguides, as demonstrated earlier, at 10.6 μm wavelength has prompted us to investigate the propagation characteristics of these waveguides at 1.06 μm and 0.905 μm wavelengths.^1,2 To be useful at these wavelengths, it is necessary to reduce the film thickness to 1-2 μm and ensure good surface quality at both air/film and film/substrate interfaces. Further, in order to be useful at 0.905 μm, the band-edge absorption must be reduced. Addition of phosphorus into GaAs epitaxial film is expected to reduce the band-edge absorption by shifting the absorption edge to a shorter wavelength. However, the effect of strain induced by lattice mismatch between the film and the substrate may tend to broaden the absorption edge.

© 1976 Optical Society of America