Abstract

For applications such as optical interconnects¹ it is desirable to have the ability to integrate optical modulators, waveguides and silicon electronics. One system of interest is the class of GaAs multiple quantum well (MQW) structures where optical modulation is due to the quantum-confined Stark effect (QCSE)² integrated with GaAs/AlGaAs waveguides on Si.³ In support of this scheme, results obtained for GaAs on Si MQW reflection modulators have indicated that, in contrast to some GaAs on Si optical devices (e.g. heterostructure lasers), QCSE modulator structures are relatively insensitive to the defects associated with epitaxial GaAs on Si growth.^4,5

© 1990 Optical Society of America