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Integration of InGaAs/InP p-i-n photodetectors with glass waveguides

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Abstract

The use of epitaxial lift-off1 to incorporate active optoelectronic components on low loss and inexpensive nonsemiconductor optical waveguides offers an attractive technology for high-performance integrated optics. Using this technique, we have previously reported the integration and optical coupling of short-wavelength GaAs metal–semi-conductor–metal (MSM) photodetectors with glass waveguides.2 Here we report the integration and optical coupling of long-wavelength InGaAs p-i-n photodetectors, which are important to fiber-based systems operating in the 1.3-1.55-μm-wavelength region, with glass waveguides.

© 1990 Optical Society of America

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