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Numerical simulation of bistable semiconductor lasers

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Abstract

In this paper an extensive analysis of the methods (See Refs. 1-3 for a review) used for the simulation of bistable lasers with a saturable absorber has been carried out. In particular a comparison between mean field1 and traveling-wave2 monomode1 and multimode2 models has been made with respect to the static behavior (switch on-off current, width of the hysteresis loop, spectrum of emission) of typical structures.

© 1990 Optical Society of America

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