Abstract

As the structures of optoelectronic devices become more and more complicated, a detailed understanding of the operating characteristics has to be obtained by computer simulation. In new devices with explicit longitudinal variations in the geometry former assumptions that photons and carriers are uniformly distributed has to be modified. Examples of such devices are multisegment lasers [1], lasers for active Q-switching [2], and semiconductor lasers with asymmetric mirror reflectivities [3]. The goal for this work has been to develop a computer model which is applicable to a large variety of longitudinally nonuniform optoelectronic devices with general cross-sectional geometries. Here this model is applied to the problem of a Q-switched GaAs/AlGaAs laser.

© 1991 Optical Society of America