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Impact of free-carrier electric-field screening on the transmissivity of long low-loss p-i-n silicon waveguides

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Abstract

We show analytically for long low-loss p-i-n silicon waveguides that upshifting the electric-field-screening threshold intensity simultaneously requires an adequate reduction of the low-intensity free-carrier lifetime to improve the high-intensity transmissivity.

© 2013 Optical Society of America

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