Abstract

I. Introduction. Studying of charge transfer processes and field evolution in GaAs p-i-n structures is of interest because of applications in different electronic devices. It is considered [1] that in reversed based structures after finishing all transient processes the field distribution in bulk of i-layer has maximum strongly shifted to p- or n-layer. the shift direction depends on the impurity prevailing in i- layer; the impurity is considered to be ionized. Very often sucn assumptions are not enough valid. It is connected with complications of the method to obtain experimental information about spacial field distribution in a structure especially made of high-resistivity crystals with low impurity concentra- 15 -3 . tion (<10 cm ). Recent investigations of high - resistivity semiconductor crystals uses electrooptic effect in determination of spacial distribution of the field and its dynamics. They enable to give up the assumptions above and to provide more accurate modeling of charge transfer and field screening processes in GaAs p-i-n structures. In resent work field dynamics was studied in reverse biased bulk p-i-n structures made of lightly doped GaAs. Field evolution in different layers of the structure after voltage application and stationary field distribution were observed at voltage range (U=IO-I4OV). Theo retical modeling of the fenomena was provided taking into account only drift transport of generated free carriers.

© 1993 Optical Society of America