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Room temperature CW operation of 1.3um quantum dot lasers on a Si substrate by Pd-mediated wafer bonding

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Abstract

Room temperature CW operation of a 1.3µm InAs quantum dot laser integrated on a Si substrate is demonstrated using palladium mediated wafer bonding. This integration offers excellent electrical and thermal contact for Photonic Integrated Circuits.

© 2015 Optical Society of America

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