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Conferences > IPRSN > 2016 > ITu2A > ITu2A.2

Ultra-low surface recombination for deeply etched III-V semiconductor nano-cavity lasers

A. Higuera-Rodriguez, B. Romeira, S. Birindelli, L. Black, B. Smalbrugge, W. M. M. Kessels, M. K. Smit, and A. Fiore

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Abstract

We investigated the passivation of III-V semiconductor nanostructures using wet-chemical ammonium sulfide treatment and SiOx encapsulation. We achieved an ultra-low surface recombination velocity value of ~530 cm/s enabling the future development of high-performance room-temperature nanolasers.

© 2016 Optical Society of America

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