Abstract

The investigation of weakly-excited, heavily-doped bulk semiconductors by femtosecond excitation and luminescence up-conversion techniques allows the dynamics of a single carrier species to be explored,^[1] as the doping provides a large reservoir of conjugate charge carriers at thermodynamic equilibrium, which is only slightly perturbed by weak excitation. Furthermore, in the case of heavy p-doping (hole reservoir), luminescence directly related to electron population can be observed well above the band-gap, because of the extensive hole distribution (Fig. 1).

© 1992 IQEC