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Femtosecond Carrier-Carrier Interaction Dynamics in doped-GaAs

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Abstract

Carrier-carrier interaction is a very important energy-relaxation mechanism for carriers in semiconductors. Femtosecond optical spectroscopy provides fundamental insight into the carrier dynamics of semiconductors. In this paper, we report systematic studies of femtosecond carrier-carrier interaction dynamics in p-doped and n-doped GaAs samples with doping concentration as a parameter.

© 1992 The Author(s)

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