Abstract

A multi-quantum barrier (MQB)^[1] was proposed to enhance the carrier confinement of the double heterostructure laser diodes by the virtual potential barrier utilizing the interference of the quantum reflection of electron waves from the stacked superlattices. This MQB concept is now strongly desired for the low-bamer height heterojunction materials, especially for the AlGalnP based red or orange lasers^[2,3] or II-VI based blue or green lasers. Recently, we have demonstrated the superior carrier confinement effect by the MQB to that of the bulk barrier in the n-GaAs/i-barrier/n-GaAs tunneling diode^[4].

© 1992 IQEC