Abstract

We use the double heterostructure (DH) in most of current semiconductor lasers for the purpose of confinement of both optical field and carriers as well¹. In order to prevent electrons from leaking over the hetero-barrier of a p-type cladding, it is known that more than 300 meV of built-in potential difference is usually required². But in some cases such as high power and high temperature operations, much higher barrier height is preferable. However, enough barrier height is not sometimes available due to the material limitation, e.g., in short wavelength GaAlInP based red-orange lasers and II-VI based blue-green ZnCdSSe or blue ZnMgSSe systems³.

© 1993 Optical Society of America